Degradative chain transfer in vinyl acetate polymerizations using toluene as solvent

In this work, we propose that retardation in vinyl acetate polymerization rate in the presence of toluene is due to degradative chain transfer. The transfer constant to toluene (C_trs) determined using the Mayo method is equal to 3.8 × 10^?3, which is remarkably similar to the value calculated from the rate data, assuming degradative chain transfer (2.7 × 10^?3). Simulations, including chain‐length‐dependent termination, were carried out to compare our degradative chain transfer model with experimental results. The conversion–time profiles showed excellent agreement between experiment and simulation. Good agreement was found for the M_n data as a function of conversion. The experimental and simulation data strongly support the postulate that degradative chain transfer is the dominant kinetic mechanism. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3620–3625, 2007     

Actively mode-locked dual-wavelength fiber laser with close wavelength spacing using a fiber Bragg grating

A simple actively mode-locked fiber ring laser is proposed and successfully demonstrated to generate dual-wavelength picosecond pulses with close wavelength spacing using one Bragg grating in standard single-mode fiber. The proposed laser can be made to operate in stable dual-wavelength at room temperature, due to the birefringence characteristic of the FBG induced by transverse strain. Transverse strain loading on the FBG allows the wavelength spacing to be controlled. Generation of stable dual-wavelength pulses with a pulsewidth of 212–234 ps and a tunable wavelength separation from 0.2 to 0.44 nm at a pulse rate of 1.05 GHz was demonstrated.     

Polarization locking and nonparaxial spatial solitons in media with electronic Kerr nonlinearity

The polarization structure of nonparaxial spatial solitons in a transparent medium with the electronic mechanism of Kerr nonlinearity is studied theoretically. It is demonstrated analytically in the weak nonparaxiality approximation that the regime of polarization locking, in which all the field components have the same propagation constant, is the only stable regime. Estimates of the rate of transition of the initial metastable regime of rotation of the polarization ellipse to the regime of polarization locking are presented. Based on a numerical solution of the nonlinear Maxwell equations, the presence of the nonparaxial regime of polarization locking is confirmed and the main characteristics of the corresponding spatial solitons are obtained.     

Content and Methodological Provision of the Basic Course of Analytical Chemistry

Russian standards in training conventional graduates and bachelors are considered. These standards determine the status and volume of analytical chemistry courses at different higher educational institutions. An analysis of the educational standards, standard curricula, and the aims of teaching analytical chemistry suggests the advisability of changing the content of the course, particularly at industrial (branch) higher educational institutions. The provision of the analytical chemistry course with special literature (manuals, textbooks), equipment, and computer software is considered.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

Optimization of in-vacuo template-stripped Pt surfaces via UHV STM

A recently demonstrated [1] in-vacuo template-stripping process is applied to the study of platinum films stripped from ultra-flat silicon-oxide surfaces. Template-stripped (TS) Pt surfaces, prepared with a range of post-deposition annealing times prior to being stripped from the templating surface in an ultra-high vacuum (UHV) environment, are examined by UHV scanning tunneling microscopy (STM). These studies reveal that without post-deposition annealing, TS Pt surfaces are largely made up of poorly-ordered, granular nanostructures undesirable for many applications. The post-deposition annealing treatments explored in the study result in the emergence and continuous growth of large smooth crystallites. Issues with crystallite orientation relative to the TS surface and artefacts arising as a result of the epoxy used in the template-stripping process are presented and discussed in relation to optimizing the template-stripping procedure for specific applications such as self-assembled monolayer (SAM) formation for molecular electronics. PACS 68.37.Ef; 68.47.De; 68.55.Jk; 81.05.Bx; 81.15.Ef     

Determination of Calcium,Magnesium, Iron,Copper, Zinc,and Phosphorus in Blood Serum by Arc Atomic Emission Spectrometry

The results of the elemental analysis of blood serum are often used for the diagnosis of different diseases associated with derangements of mineral metabolism. In this work, we studied the main sources of a systematic error in the atomic-emission spectrometric (AES) analysis of blood serum and developed a procedure for the AES determination of Ca, Cu, Fe, Mg, P, and Zn in the human blood serum. The repeatability relative standard deviations of determinations varied from 10 to 24%.     

Quasi-ballistic electron transport in quantum wires

Electron transport in a three-dimensional quantum wire is analyzed by taking into account electron scattering by a single point impurity. It is shown that the magnetoconductance plotted versus chemical potential μ has narrow peaks and closely located peaks separated by a dip when the scattering length is positive and negative, respectively. The peaks lie near the conductance steps. The thermopower plotted versus μ has narrow peaks and closely located peaks separated by a dip when the scattering length is positive and negative, respectively.     

On the Zero-Energy-Limit Solution for the Modified Gross–Pitaevskii Equation

The modified Gross–Pitaevskii equation was derived and solved to obtain the 1D solution in the zero-energy limit. This stationary solution could account for the dominated contributions due to the kinetic effect as well as the chemical potential in inhomogeneous Bose gases.